Print Page

FDS6875

Name: ONSEMI FDS6875
Brand: ONSEMI
SKU: 38C7173
Availability: OutOfStock

Dual MOSFET, P Channel, 20 V, 6 A

Image is for illustrative purposes only. Please refer to product description.

ManufacturerONSEMI

Manufacturer Part NoFDS6875

Newark Part No.38C7173

Your Part Number

Technical Datasheet

Data Sheet

See all Technical Docs

Packaging Options

Cut Tape

Full Reel

Available to Order

Manufacturer Standard Lead Time: 18 week(s)

Price shown includes applicable duties and tariffs

Quantity	Price
1000+	$0.848

Price for:Each (Supplied on Cut Tape)

Minimum: 2500

Multiple: 2500

$2,120.00

Line Note

Added to your Order Confirmation, Invoice, and Dispatch note for this order only.

Product Information

ManufacturerONSEMI

Manufacturer Part NoFDS6875

Newark Part No.38C7173

Technical Datasheet

Data Sheet

Channel TypeP Channel

Drain Source Voltage Vds N Channel-

Drain Source Voltage Vds P Channel20V

Continuous Drain Current Id N Channel-

Continuous Drain Current Id P Channel6A

Drain Source On State Resistance N Channel-

Drain Source On State Resistance P Channel0.024ohm

Transistor Case StyleSOIC

No. of Pins8Pins

Power Dissipation N Channel-

Power Dissipation P Channel2W

Operating Temperature Max150°C

Product Range-

Qualification-

MSLMSL 1 - Unlimited

SVHCNo SVHC (25-Jun-2025)

Product Overview

The FDS6875 is a dual P-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics like load switching, battery charging and protection circuits applications.

Low gate charge
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability
±8V Gate to source voltage
-6A Continuous drain current
-20A Pulsed drain current

Applications

Industrial, Power Management

Technical Specifications

Channel Type

P Channel

Drain Source Voltage Vds P Channel

20V

Continuous Drain Current Id P Channel

Drain Source On State Resistance P Channel

0.024ohm

No. of Pins

8Pins

Power Dissipation P Channel

Product Range

MSL

MSL 1 - Unlimited

Drain Source Voltage Vds N Channel

Continuous Drain Current Id N Channel

Drain Source On State Resistance N Channel

Transistor Case Style

SOIC

Power Dissipation N Channel

Operating Temperature Max

150°C

Qualification

SVHC

No SVHC (25-Jun-2025)

Technical Docs (4)

Reactivation Notices EN

Product Change Notice EN

EOL Notices EN

Technical Data Sheet EN

Alternatives for FDS6875

1 Product Found

Associated Products

4 Products Found

Legislation and Environmental

US ECCN:EAR99

EU ECCN:Unknown

RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes