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FDS6679AZ
Power MOSFET, P Channel, 30 V, 13 A, 0.0077 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS6679AZCopy
Manufacturer Standard Lead Time13 weeks
Newark Part No.
Re-Reel75M2466
Cut Tape75M2466
Your Part Number
106,156 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.640 | $1.64 |
| Total Price | $1.64 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.640 |
| 10+ | $0.973 |
| 25+ | $0.904 |
| 50+ | $0.835 |
| 100+ | $0.766 |
| 250+ | $0.693 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6679AZCopy
Manufacturer Standard Lead Time13 weeks
Newark Part No.
Re-Reel75M2466
Cut Tape75M2466
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id13A
Drain Source On State Resistance0.0077ohm
On Resistance Rds(on)0.0077ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.9V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDS6679AZ is a P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. This device is well suited for load switching applications common in portable battery packs.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handing capability
- 6kV typical HBM ESD protection level
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0077ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
13A
On Resistance Rds(on)
0.0077ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for FDS6679AZ
2 Products Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate