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FDP5800
Power MOSFET, N Channel, 60 V, 80 A, 0.006 ohm, TO-220, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFDP5800
Newark Part No.61M6291
Your Part Number
Technical Datasheet
300 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $3.190 |
| 10+ | $2.010 |
| 100+ | $1.870 |
| 500+ | $1.730 |
| 1600+ | $1.680 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP5800
Newark Part No.61M6291
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id80A
On Resistance Rds(on)0.0046ohm
Drain Source On State Resistance0.006ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Power Dissipation Pd242mW
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.5V
Power Dissipation242mW
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0046ohm
Transistor Case Style
TO-220
Power Dissipation Pd
242mW
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
Drain Source On State Resistance
0.006ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
20V
Power Dissipation
242mW
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead
Technical Docs (2)
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Associated Products
7 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate