FDP20N50F
Power MOSFET, N Channel, 500 V, 20 A, 0.22 ohm, TO-220, Through Hole
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDP20N50FCopy |
| Manufacturer Standard Lead Time | 20 weeks |
| Newark Part No. | 95W3174 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | $4.870 |
| 10+ | $3.420 |
| 25+ | $3.110 |
| 50+ | $2.790 |
| 100+ | $2.590 |
| 250+ | $2.420 |
| 500+ | $2.240 |
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDP20N50FCopy |
| Manufacturer Standard Lead Time | 20 weeks |
| Newark Part No. | 95W3174 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Transistor Polarity | N Channel |
| Drain Source Voltage Vds | 500V |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 0.22ohm |
| On Resistance Rds(on) | 0.22ohm |
| Transistor Case Style | TO-220 |
| Transistor Mounting | Through Hole |
| Power Dissipation Pd | 250W |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3V |
| Power Dissipation | 250W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The FDP20N50F is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dV/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
- Improve dV/dt capability
- 100% avalanche tested
- 50nC typical low gate charge
- 27pF typical low Crss
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 500V |
| Drain Source On State Resistance | 0.22ohm |
| Transistor Case Style | TO-220 |
| Power Dissipation Pd | 250W |
| Gate Source Threshold Voltage Max | 3V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
| Transistor Polarity | N Channel |
|---|---|
| Continuous Drain Current Id | 20A |
| On Resistance Rds(on) | 0.22ohm |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 250W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |