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Available to Order
Manufacturer Standard Lead Time: 8 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.141 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$423.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDN306P
Newark Part No.67R2055
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id2.6A
On Resistance Rds(on)0.03ohm
Drain Source On State Resistance0.04ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd500mW
Gate Source Threshold Voltage Max600mV
Transistor Case StyleSuperSOT
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The FDN306P is a P-channel 1.8V specified MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.
- Fast switching
- High performance trench technology for extremely low RDS (ON)
Applications
Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
12V
On Resistance Rds(on)
0.03ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
500mW
Transistor Case Style
SuperSOT
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
2.6A
Drain Source On State Resistance
0.04ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
600mV
Power Dissipation
500mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
Alternatives for FDN306P
1 Product Found
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
