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FDMA1032CZ
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.7 A, 3.7 A, 0.037 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDMA1032CZCopy
Manufacturer Standard Lead Time41 weeks
Newark Part No.03M2670
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 41 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.329 |
| 6000+ | $0.309 |
| 9000+ | $0.303 |
| 15000+ | $0.297 |
| 30000+ | $0.290 |
| 75000+ | $0.284 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$987.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMA1032CZCopy
Manufacturer Standard Lead Time41 weeks
Newark Part No.03M2670
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id3.7A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel3.7A
Continuous Drain Current Id P Channel3.7A
Drain Source On State Resistance N Channel0.037ohm
Drain Source On State Resistance P Channel0.037ohm
Transistor Case StyleµFET
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDMA1032CZ is a dual N/P-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent N and P-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
- Low profile
- Halogen-free
- ±12V Gate to source voltage
- -3.1A Continuous drain current
- 6A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
3.7A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
3.7A
Drain Source On State Resistance P Channel
0.037ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.4W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
3.7A
Drain Source On State Resistance N Channel
0.037ohm
Transistor Case Style
µFET
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for FDMA1032CZ
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
