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FDG6335N
Dual MOSFET, N Channel, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDG6335N
Newark Part No.
Full Reel29X6689
Cut Tape58K1457
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
Packaging Options
Cut Tape
| Quantity | Price |
|---|---|
| 100+ | $0.438 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.317 |
| 6000+ | $0.298 |
| 12000+ | $0.284 |
| 18000+ | $0.270 |
| 30000+ | $0.261 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6335N
Newark Part No.
Full Reel29X6689
Cut Tape58K1457
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id700mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel700mA
Continuous Drain Current Id P Channel700mA
Drain Source On State Resistance N Channel0.18ohm
Drain Source On State Resistance P Channel0.18ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (08-Jul-2021)
Product Overview
The FDG6335N is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package. It is suitable for use with DC-to-DC converters and load switch applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Compact industry standard surface-mount-package
- ±12V Gate to source voltage
- 0.7A Continuous drain current
- 2.1A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
700mA
Drain Source On State Resistance P Channel
0.18ohm
No. of Pins
6Pins
Power Dissipation P Channel
300mW
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
700mA
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
700mA
Drain Source On State Resistance N Channel
0.18ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (08-Jul-2021)
Technical Docs (3)
Alternatives for FDG6335N
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate