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FDG6306P
MOSFET Transistor, Dual P Channel, -600 mA, -20 V, 0.3 ohm, -4.5 V, -1.2 V RoHS Compliant: Yes
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ManufacturerONSEMI
Manufacturer Part NoFDG6306P
Newark Part No.
Re-Reel31Y1371
Cut Tape31Y1371
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6306P
Newark Part No.
Re-Reel31Y1371
Cut Tape31Y1371
Technical Datasheet
Channel TypeP Channel
Continuous Drain Current Id600mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel600mA
Continuous Drain Current Id P Channel600mA
Drain Source On State Resistance N Channel0.3ohm
Drain Source On State Resistance P Channel0.3ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (14-Jun-2023)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
600mA
Drain Source On State Resistance P Channel
0.3ohm
No. of Pins
6Pins
Power Dissipation P Channel
300mW
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
600mA
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
600mA
Drain Source On State Resistance N Channel
0.3ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (14-Jun-2023)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65