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FDD8444
Power MOSFET, N Channel, 40 V, 145 A, 0.004 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFDD8444
Newark Part No.85W3139
Your Part Number
Technical Datasheet
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD8444
Newark Part No.85W3139
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id145A
On Resistance Rds(on)0.004ohm
Drain Source On State Resistance0.004ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd153W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation153W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FDD8444 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for electronic transmission, distributed power architecture and VRMs applications.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
- Qualified to AEC-Q101
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.004ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
153W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
145A
Drain Source On State Resistance
0.004ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
153W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (3)
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Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65