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FDD5614P
Power MOSFET, P Channel, 60 V, 15 A, 0.1 ohm, TO-252 (DPAK), Surface Mount
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD5614P
Newark Part No.82C2455
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id15A
Drain Source On State Resistance0.1ohm
On Resistance Rds(on)0.1ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd42W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation42W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead
Product Overview
The FDD5614P is a P-channel MOSFET uses high voltage PowerTrench® process, fast switching speed, high performance trench technology for extremely low RDS (ON).
- High power and current handling capability
Applications
Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.1ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
42W
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
15A
On Resistance Rds(on)
0.1ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
42W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
