Print Page

FDD10AN06A0

Name: ONSEMI FDD10AN06A0
Brand: ONSEMI
SKU: 58K8830
Availability: OutOfStock

Power MOSFET, N Channel, 60 V, 50 A, 0.0105 ohm, TO-252AA, Surface Mount

Image is for illustrative purposes only. Please refer to product description.

ManufacturerONSEMI

Manufacturer Part NoFDD10AN06A0

Newark Part No.58K8830

Your Part Number

Technical Datasheet

Data Sheet

See all Technical Docs

Packaging Options

Cut Tape

Full Reel

Available to Order

Manufacturer Standard Lead Time: 21 week(s)

Price shown includes applicable duties and tariffs

Quantity	Price
25+	$1.840

Price for:Each (Supplied on Cut Tape)

Minimum: 2500

Multiple: 2500

$4,600.00

Line Note

Added to your Order Confirmation, Invoice, and Dispatch note for this order only.

Product Information

ManufacturerONSEMI

Manufacturer Part NoFDD10AN06A0

Newark Part No.58K8830

Technical Datasheet

Data Sheet

Transistor PolarityN Channel

Channel TypeN Channel

Drain Source Voltage Vds60V

Continuous Drain Current Id50A

Drain Source On State Resistance0.0105ohm

On Resistance Rds(on)0.0094ohm

Transistor MountingSurface Mount

Power Dissipation Pd135W

Rds(on) Test Voltage10V

Gate Source Threshold Voltage Max4V

Transistor Case StyleTO-252AA

Power Dissipation135W

No. of Pins3Pins

Operating Temperature Max175°C

Qualification-

Product Range-

MSLMSL 1 - Unlimited

SVHCLead

Product Overview

The FDD10AN06A0 is a N-channel MOSFET produced using PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher reliability and system efficiency.

Low miller charge
Low Qrr body diode
UIS Capability (single pulse and repetitive pulse)

Technical Specifications

Transistor Polarity

N Channel

Drain Source Voltage Vds

60V

Drain Source On State Resistance

0.0105ohm

Transistor Mounting

Surface Mount

Rds(on) Test Voltage

10V

Transistor Case Style

TO-252AA

No. of Pins

3Pins

Qualification

MSL

MSL 1 - Unlimited

Channel Type

N Channel

Continuous Drain Current Id

50A

On Resistance Rds(on)

0.0094ohm

Power Dissipation Pd

135W

Gate Source Threshold Voltage Max

Power Dissipation

135W

Operating Temperature Max

175°C

Product Range

SVHC

Lead

Technical Docs (2)

Technical Data Sheet EN

Product Change Notice EN

Alternatives for FDD10AN06A0

1 Product Found

Associated Products

4 Products Found

Legislation and Environmental

US ECCN:EAR99

EU ECCN:Unknown

RoHS Compliant:Y-Ex

RoHS

RoHS Phthalates Compliant:Yes