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FDC642P
Power MOSFET, P Channel, 20 V, 4 A, 0.045 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC642PCopy
Manufacturer Standard Lead Time14 weeks
Newark Part No.
Re-Reel31Y1348RL
Cut Tape31Y1348
Your Part Number
3,892 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $0.890 | $4.45 |
| Total Price | $4.45 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $0.890 |
| 10+ | $0.554 |
| 15+ | $0.505 |
| 25+ | $0.455 |
| 50+ | $0.406 |
| 125+ | $0.358 |
| 250+ | $0.351 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC642PCopy
Manufacturer Standard Lead Time14 weeks
Newark Part No.
Re-Reel31Y1348RL
Cut Tape31Y1348
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4A
On Resistance Rds(on)0.045ohm
Drain Source On State Resistance0.045ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.6W
Gate Source Threshold Voltage Max600mV
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC642P is a 2.5V specified single P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. It is suitable for use in load switch and battery protection application.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- 11nC typical low gate charge
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.045ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
600mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
4A
Drain Source On State Resistance
0.045ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.6W
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Alternatives for FDC642P
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate