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FDC6310P
MOSFET, 2 P-CH, -20V, -2.2A, SOT-23-6
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ManufacturerONSEMI
Manufacturer Part NoFDC6310P
Newark Part No.
Full Reel58K1418
Re-Reel31Y1345
Cut Tape31Y1345
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $1.020 | $1.02 |
| Total Price | $1.02 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.020 |
| 10+ | $0.636 |
| 25+ | $0.562 |
| 50+ | $0.488 |
| 100+ | $0.415 |
| 250+ | $0.368 |
| 500+ | $0.319 |
| 1000+ | $0.289 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.233 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6310P
Newark Part No.
Full Reel58K1418
Re-Reel31Y1345
Cut Tape31Y1345
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id2.2A
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel2.2A
Continuous Drain Current Id P Channel2.2A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.125ohm
Transistor Case StyleSOT-23
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC6310P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.2A
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
2.2A
Drain Source On State Resistance P Channel
0.125ohm
No. of Pins
6Pins
Power Dissipation P Channel
960mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
2.2A
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOT-23
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Alternatives for FDC6310P
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability