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FDC6301N..
Dual MOSFET, N Channel, 25 V, 220 mA, 5 ohm
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ManufacturerONSEMI
Manufacturer Part NoFDC6301N..
Newark Part No.
Full Reel85AC1769
Re-Reel47T5014
Cut Tape47T5014
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.618 |
| 10+ | $0.379 |
| 25+ | $0.333 |
| 50+ | $0.287 |
| 100+ | $0.241 |
| 250+ | $0.212 |
| 500+ | $0.182 |
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| Quantity | Price |
|---|---|
| 3000+ | $0.163 |
| 6000+ | $0.142 |
| 12000+ | $0.127 |
| 18000+ | $0.116 |
| 30000+ | $0.106 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6301N..
Newark Part No.
Full Reel85AC1769
Re-Reel47T5014
Cut Tape47T5014
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id220mA
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds25V
Continuous Drain Current Id N Channel220mA
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel5ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDC6301N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. It is very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this N-channel FET's can replace several digital transistors, with a variety of bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
- -0.5 to 8V Gate to source voltage
- 0.22A Continuous drain/output current
- 0.5A Pulsed drain/output current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds
25V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
220mA
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
220mA
Drain Source On State Resistance N Channel
5ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate