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BSS123L
Power MOSFET, N Channel, 100 V, 170 mA, 6 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoBSS123LCopy
Manufacturer Standard Lead Time54 weeks
Newark Part No.
Full Reel85AC1480
Re-Reel84Y9816RL
Cut Tape84Y9816
Your Part Number
78,772 In Stock
9,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.276 | $0.28 |
| Total Price | $0.28 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.276 |
| 50+ | $0.171 |
| 100+ | $0.110 |
| 250+ | $0.097 |
| 500+ | $0.084 |
| 1000+ | $0.075 |
| 2500+ | $0.074 |
| 5000+ | $0.072 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.049 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS123LCopy
Manufacturer Standard Lead Time54 weeks
Newark Part No.
Full Reel85AC1480
Re-Reel84Y9816RL
Cut Tape84Y9816
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170mA
On Resistance Rds(on)2.98ohm
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd360mW
Gate Source Threshold Voltage Max1.405V
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such as small servo motor controller, power MOSFET gate drivers, logic level transistorss, high speed line drivers, power management/power supply and switching applications.
- High density cell design for low on-resistance
- Rugged and reliable
- Very low capacitance
- Fast switching speed
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
2.98ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.405V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
170mA
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
360mW
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
