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BS170_D27Z
Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoBS170_D27ZCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel67P3441RL
Cut Tape67P3441
Your Part Number
1 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 1 | $0.480 | $0.48 |
| Total Price | $0.48 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.480 |
| 50+ | $0.298 |
| 100+ | $0.188 |
| 250+ | $0.165 |
| 500+ | $0.141 |
| 1000+ | $0.126 |
| 2500+ | $0.123 |
| 5000+ | $0.121 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoBS170_D27ZCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel67P3441RL
Cut Tape67P3441
Technical Datasheet
Alternatives for BS170_D27Z
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Product Overview
The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
- High density cell design for low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
