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BS170_D27Z
Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoBS170_D27ZCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel67P3441RL
Cut Tape67P3441
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| Quantity | Price |
|---|---|
| 1+ | $0.510 |
| 50+ | $0.315 |
| 100+ | $0.199 |
| 250+ | $0.174 |
| 500+ | $0.149 |
| 1000+ | $0.133 |
| 2500+ | $0.130 |
| 5000+ | $0.128 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBS170_D27ZCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel67P3441RL
Cut Tape67P3441
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id500mA
On Resistance Rds(on)1.2ohm
Drain Source On State Resistance1.2ohm
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd830mW
Transistor Case StyleTO-92
Gate Source Threshold Voltage Max2.1V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (15-Jan-2018)
Alternatives for BS170_D27Z
2 Products Found
Product Overview
The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as power MOSFET gate drivers and other switching applications.
- High density cell design for low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.2ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
830mW
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
500mA
Drain Source On State Resistance
1.2ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-92
Power Dissipation
830mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
