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BDV64BG
Bipolar (BJT) Single Transistor, Darlington, PNP, -100 V, 125 W, -10 A, 1000 RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $4.740 |
| 10+ | $4.120 |
| 25+ | $3.500 |
| 60+ | $2.880 |
| 120+ | $2.680 |
| 270+ | $2.470 |
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Multiple: 1
$4.74
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBDV64BG
Newark Part No.37K9413
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Continuous Collector Current10A
Power Dissipation Pd125W
Transition Frequency-
DC Collector Current10A
Power Dissipation125W
Transistor Case StyleTO-247
RF Transistor CaseTO-247
No. of Pins3Pins
DC Current Gain hFE1000hFE
Transistor MountingThrough Hole
DC Current Gain hFE Min1000hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
125W
DC Collector Current
10A
Transistor Case Style
TO-247
No. of Pins
3Pins
Transistor Mounting
Through Hole
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage Max
100V
Continuous Collector Current
10A
Transition Frequency
-
Power Dissipation
125W
RF Transistor Case
TO-247
DC Current Gain hFE
1000hFE
DC Current Gain hFE Min
1000hFE
Product Range
-
MSL
-
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability