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BD159G
Bipolar (BJT) Single Transistor, NPN, 350 V, 500 mA, 20 W, TO-225, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoBD159G
Newark Part No.26K3495
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoBD159G
Newark Part No.26K3495
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo350V
Collector Emitter Voltage Max350V
Continuous Collector Current500mA
Transition Frequency-
Power Dissipation Pd20W
Power Dissipation20W
DC Collector Current500mA
DC Current Gain hFE30hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-225
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (19-Jan-2021)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
350V
Transition Frequency
-
Power Dissipation
20W
DC Current Gain hFE
30hFE
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
350V
Continuous Collector Current
500mA
Power Dissipation Pd
20W
DC Collector Current
500mA
Transistor Mounting
Through Hole
Transistor Case Style
TO-225
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate