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BC857BWT1G
Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 150 RoHS Compliant: Yes
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ManufacturerONSEMI
Manufacturer Part NoBC857BWT1G
Newark Part No.31Y0528
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBC857BWT1G
Newark Part No.31Y0528
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo45V
Collector Emitter Voltage Max45V
DC Collector Current100mA
Continuous Collector Current100mA
Power Dissipation150mW
Power Dissipation Pd150mW
Transistor Case StyleSC-70
DC Current Gain hFE150hFE
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency100MHz
DC Current Gain hFE Min150hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
45V
Continuous Collector Current
100mA
Power Dissipation Pd
150mW
DC Current Gain hFE
150hFE
No. of Pins
3Pins
DC Current Gain hFE Min
150hFE
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Collector Emitter Voltage V(br)ceo
45V
DC Collector Current
100mA
Power Dissipation
150mW
Transistor Case Style
SC-70
Transistor Mounting
Surface Mount
Transition Frequency
100MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability