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BC639RL1G
Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 625 mW, TO-92, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoBC639RL1G
Newark Part No.
Re-Reel85W3110
Cut Tape85W3110
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerONSEMI
Manufacturer Part NoBC639RL1G
Newark Part No.
Re-Reel85W3110
Cut Tape85W3110
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Collector Emitter Voltage Max80V
Continuous Collector Current1A
Power Dissipation625mW
Power Dissipation Pd625mW
DC Collector Current1A
Transistor MountingThrough Hole
DC Current Gain hFE40hFE
Transistor Case StyleTO-92
No. of Pins3Pins
Transition Frequency200MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
80V
Power Dissipation
625mW
DC Collector Current
1A
DC Current Gain hFE
40hFE
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
80V
Continuous Collector Current
1A
Power Dissipation Pd
625mW
Transistor Mounting
Through Hole
Transistor Case Style
TO-92
Transition Frequency
200MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate