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BC559
Bipolar (BJT) Single Transistor, PNP, 30 V, 100 mA, 500 mW, TO-92, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoBC559
Newark Part No.18C5847
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoBC559
Newark Part No.18C5847
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo30V
Collector Emitter Voltage Max30V
Continuous Collector Current100mA
DC Collector Current100mA
Power Dissipation Pd500mW
Power Dissipation500mW
DC Current Gain hFE110hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-92
Transition Frequency150MHz
DC Current Gain hFE Min110hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
30V
DC Collector Current
100mA
Power Dissipation
500mW
Transistor Mounting
Through Hole
Transistor Case Style
TO-92
DC Current Gain hFE Min
110hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
30V
Continuous Collector Current
100mA
Power Dissipation Pd
500mW
DC Current Gain hFE
110hFE
No. of Pins
3Pins
Transition Frequency
150MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate