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2N7000-D26Z
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
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ManufacturerONSEMI
Manufacturer Part No2N7000-D26ZCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel78K6147RL
Cut Tape78K6147
Your Part Number
1,581 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 1 | $0.598 | $0.60 |
| Total Price | $0.60 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.598 |
| 50+ | $0.368 |
| 100+ | $0.234 |
| 250+ | $0.205 |
| 500+ | $0.176 |
| 1000+ | $0.158 |
| 2500+ | $0.155 |
| 5000+ | $0.152 |
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N7000-D26ZCopy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Re-Reel78K6147RL
Cut Tape78K6147
Technical Datasheet
Product Overview
The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- 60V drain gate voltage (VDGR)
- ±20V continuous gate source voltage (VGSS)
- 312.5°C/W Thermal resistance, junction to ambient
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
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