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2N6287G
Darlington Transistor, PNP, 2 Pins
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ManufacturerONSEMI
Manufacturer Part No2N6287G
Newark Part No.26K5316
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part No2N6287G
Newark Part No.26K5316
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Transition Frequency-
Continuous Collector Current20A
Power Dissipation160W
Transistor MountingThrough Hole
No. of Pins2Pins
Transistor Case StyleTO-3
DC Current Gain hFE Min18hFE
Operating Temperature Max200°C
Qualification-
Product Range-
SVHCLead
Product Overview
The 2N6287G is a -100V Silicon PNP Bipolar Complementary Darlington Power Transistor designed for general purpose amplifier and low frequency switching applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
- High DC current gain
- Collector-emitter sustaining voltage(Vce (sus) = 100VDC minimum)
- Collector-base voltage (Vcbo = 100V)
- Emitter-base voltage (Vcbo = 5V)
Applications
Industrial
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
20A
Transistor Mounting
Through Hole
Transistor Case Style
TO-3
Operating Temperature Max
200°C
Product Range
-
SVHC
Lead
Collector Emitter Voltage Max
100V
Transition Frequency
-
Power Dissipation
160W
No. of Pins
2Pins
DC Current Gain hFE Min
18hFE
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate