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2N5962
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 625 mW, TO-92, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part No2N5962
Newark Part No.58K2824
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo45V
Collector Emitter Voltage Max45V
Continuous Collector Current100mA
Transition Frequency-
Power Dissipation Pd625mW
Power Dissipation625mW
DC Collector Current100mA
DC Current Gain hFE600hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-92
DC Current Gain hFE Min600hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
45V
Transition Frequency
-
Power Dissipation
625mW
DC Current Gain hFE
600hFE
No. of Pins
3Pins
DC Current Gain hFE Min
600hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
45V
Continuous Collector Current
100mA
Power Dissipation Pd
625mW
DC Collector Current
100mA
Transistor Mounting
Through Hole
Transistor Case Style
TO-92
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate