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NTTFS6H850NTAG
MOSFET, N-CH, 80V, 68A, WDFN
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTTFS6H850NTAG
Newark Part No.
Re-Reel62AC7363
Cut Tape62AC7363
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.290 |
| 10+ | $0.582 |
| 25+ | $0.559 |
| 50+ | $0.538 |
| 100+ | $0.515 |
| 250+ | $0.508 |
| 500+ | $0.501 |
| 1000+ | $0.499 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTTFS6H850NTAG
Newark Part No.
Re-Reel62AC7363
Cut Tape62AC7363
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id68A
Drain Source On State Resistance9500µohm
On Resistance Rds(on)0.0085ohm
Transistor Case StyleWDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd107W
Gate Source Threshold Voltage Max4V
Power Dissipation107W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
9500µohm
Transistor Case Style
WDFN
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
68A
On Resistance Rds(on)
0.0085ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
107W
Power Dissipation
107W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
Alternatives for NTTFS6H850NTAG
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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