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NTNS3A65PZT5G
MOSFET, N-CH, -20V, -281MA, SOT-883
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTNS3A65PZT5G
Newark Part No.14AC4776
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTNS3A65PZT5G
Newark Part No.14AC4776
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id281mA
On Resistance Rds(on)0.9ohm
Drain Source On State Resistance1.3ohm
Transistor Case StyleSOT-883
Transistor MountingSurface Mount
Power Dissipation Pd155mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation155mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (08-Jul-2021)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.9ohm
Transistor Case Style
SOT-883
Power Dissipation Pd
155mW
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
281mA
Drain Source On State Resistance
1.3ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
155mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (08-Jul-2021)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate