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NTD4969NT4G
Power MOSFET, N Channel, 30 V, 41 A, 0.0069 ohm, TO-252 (DPAK), Surface Mount
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTD4969NT4G
Newark Part No.13AC6210
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id41A
On Resistance Rds(on)0.0069ohm
Drain Source On State Resistance0.0069ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd26.3W
Gate Source Threshold Voltage Max1.8V
Power Dissipation26.3W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (16-Jan-2020)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0069ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
41A
Drain Source On State Resistance
0.0069ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
26.3W
Power Dissipation
26.3W
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (16-Jan-2020)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jan-2020)
Download Product Compliance Certificate
Product Compliance Certificate
