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ManufacturerONSEMI
Manufacturer Part NoNTD25P03LT4G
Newark Part No.06R3474
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.140 |
| 10+ | $0.995 |
| 25+ | $0.911 |
| 50+ | $0.840 |
| 100+ | $0.726 |
| 250+ | $0.660 |
| 500+ | $0.591 |
| 1000+ | $0.573 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTD25P03LT4G
Newark Part No.06R3474
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id25A
Drain Source On State Resistance0.08ohm
On Resistance Rds(on)0.056ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Power Dissipation Pd75W
Gate Source Threshold Voltage Max1.6V
Power Dissipation75W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
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1 Product Found
Product Overview
The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast recovery diode.
- AEC-Q101 qualified
Applications
Motor Drive & Control, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.08ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
5V
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
25A
On Resistance Rds(on)
0.056ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
75W
Power Dissipation
75W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
6 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability