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ManufacturerONSEMI
Manufacturer Part NoHUF75645S3ST
Newark Part No.98B2180
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoHUF75645S3ST
Newark Part No.98B2180
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id75A
Drain Source On State Resistance0.014ohm
On Resistance Rds(on)0.014ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd310W
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Product Overview
The HUF75645S3ST is an UltraFET N-channel Power MOSFET with ultra-low ON-resistance.
- Peak current vs. pulse width curve
- UIS rating curve
- Simulation models - Temperature compensated PSPICE® & SABER™, thermal impedance SPICE & SABER
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.014ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
75A
On Resistance Rds(on)
0.014ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
310W
Power Dissipation
310W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate