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HUF75639S3
Power MOSFET, N Channel, 100 V, 56 A, 0.021 ohm, TO-262AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoHUF75639S3
Newark Part No.98B2177
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 2 week(s)
| Quantity | Price |
|---|---|
| 500+ | $1.880 |
Price for:Each
Minimum: 800
Multiple: 800
$1,504.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoHUF75639S3
Newark Part No.98B2177
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id56A
Drain Source On State Resistance0.021ohm
On Resistance Rds(on)0.021ohm
Transistor Case StyleTO-262AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation200W
Power Dissipation Pd200W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.021ohm
Transistor Case Style
TO-262AA
Rds(on) Test Voltage
10V
Power Dissipation
200W
No. of Pins
3Pins
Qualification
-
SVHC
Lead
Transistor Polarity
N Channel
Continuous Drain Current Id
56A
On Resistance Rds(on)
0.021ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
200W
Operating Temperature Max
175°C
Product Range
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate