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HUF75329D3ST
Power MOSFET, N Channel, 55 V, 20 A, 0.026 ohm, TO-252AA, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoHUF75329D3ST
Newark Part No.81R3933
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 9 week(s)
Packaging Options
Cut Tape
| Quantity | Price |
|---|---|
| 50+ | $0.982 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoHUF75329D3ST
Newark Part No.81R3933
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id20A
On Resistance Rds(on)0.026ohm
Drain Source On State Resistance0.026ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd128W
Transistor Case StyleTO-252AA
Gate Source Threshold Voltage Max4V
Power Dissipation128W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.026ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
128W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
20A
Drain Source On State Resistance
0.026ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-252AA
Power Dissipation
128W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate