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FQP2N90
Power MOSFET, N Channel, 900 V, 2.2 A, 5.6 ohm, TO-220AB, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFQP2N90
Newark Part No.31Y1548
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP2N90
Newark Part No.31Y1548
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id2.2A
On Resistance Rds(on)5.6ohm
Drain Source On State Resistance5.6ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd85W
Gate Source Threshold Voltage Max5V
Power Dissipation85W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead
Product Overview
The FQP2N90 is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (12nC)
- Low Crss (5.5pF)
- 100% avalanche tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
900V
On Resistance Rds(on)
5.6ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
2.2A
Drain Source On State Resistance
5.6ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
85W
Power Dissipation
85W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate