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FDS5680
MOSFET Transistor, N Channel, 8 A, 60 V, 20 mohm, 10 V, 2.5 V RoHS Compliant: Yes
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS5680Copy
Newark Part No.96K9880
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id8A
Drain Source On State Resistance0.02ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (17-Jan-2022)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2022)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate
