Print Page
FDD5612
TRANSISTOR, MOSFET
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDD5612
Newark Part No.46T4190
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD5612
Newark Part No.46T4190
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id18A
Drain Source On State Resistance0.055ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation42W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (17-Jan-2022)
Alternatives for FDD5612
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
18A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
42W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.055ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability