Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC658AP
Newark Part No.
Full Reel86K1335
Cut Tape15R3423
Your Part Number
Technical Datasheet
6,690 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
Packaging Options
Cut Tape
| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $0.768 | $0.150 |
| 25+ | $0.545 | $0.150 |
| 50+ | $0.455 | $0.150 |
| 100+ | $0.364 | $0.150 |
| 250+ | $0.323 | $0.150 |
| 500+ | $0.281 | $0.150 |
| 1000+ | $0.254 | $0.150 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.276 |
| 6000+ | $0.267 |
| 12000+ | $0.258 |
| 18000+ | $0.248 |
| 30000+ | $0.240 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC658AP
Newark Part No.
Full Reel86K1335
Cut Tape15R3423
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id4mA
Drain Source On State Resistance0.05ohm
On Resistance Rds(on)0.044ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.6W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Transistor Case StyleSuperSOT
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Alternatives for FDC658AP
1 Product Found
Product Overview
The FDC658AP is a logic level single P-channel MOSFET produced using advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
4mA
On Resistance Rds(on)
0.044ohm
Power Dissipation Pd
1.6W
Gate Source Threshold Voltage Max
1.8V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability