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BDV65BG
Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V, 125 W, 10 A, 1000 RoHS Compliant: Yes
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Available in quantity shown
| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $2.660 | $0.336 |
| 10+ | $2.260 | $0.336 |
| 100+ | $1.810 | $0.336 |
| 500+ | $1.680 | $0.336 |
| 1000+ | $1.510 | $0.336 |
| 2500+ | $1.220 | $0.336 |
| 5000+ | $1.180 | $0.336 |
Price for:Each
Minimum: 1
Multiple: 1
$0.34
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBDV65BG
Newark Part No.37K9414
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd125W
DC Collector Current10A
RF Transistor CaseTO-247
No. of Pins3Pins
DC Current Gain hFE1000hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
125W
RF Transistor Case
TO-247
DC Current Gain hFE
1000hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
10A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability