Print Page
EE-SX673A
IGBT Module, Dual [Half Bridge], 100 A, 3 V, 672 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
![OMRON INDUSTRIAL AUTOMATION EE-SX673A IGBT Module, Dual [Half Bridge], 100 A, 3 V, 672 W, 150 °C, Module](https://www.newark.com/productimages/standard/en_US/4612626.jpg)
ManufacturerOMRON INDUSTRIAL AUTOMATION
Manufacturer Part NoEE-SX673ACopy
Manufacturer Standard Lead Time30 weeks
Newark Part No.19K9202
Product RangeA Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 30 week(s)
Notify me when back in stock
Product Information
ManufacturerOMRON INDUSTRIAL AUTOMATION
Manufacturer Part NoEE-SX673ACopy
Manufacturer Standard Lead Time30 weeks
Newark Part No.19K9202
Product RangeA Series
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current100A
DC Collector Current100A
Collector Emitter Saturation Voltage3V
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd672W
Power Dissipation672W
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product RangeA Series
SVHCTo Be Advised
Product Overview
The CM100DY-24A is a 1200V Dual IGBTMOD™ A-series Module designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
- Low drive power
- Low VCE (sat)
- Discrete super-fast recovery free-wheel diode
- Isolated baseplate for easy heat sinking
- ±20V Gate-emitter voltage (C-E short)
- 200A Peak collector current
- 100A Emitter current
Applications
Motor Drive & Control, Power Management
Technical Specifications
Transistor Polarity
N Channel
Continuous Collector Current
100A
Collector Emitter Saturation Voltage
3V
Power Dissipation Pd
672W
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
672W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
A Series
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate