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BFU660F,115
Bipolar - RF Transistor, NPN, 5.5 V, 21 GHz, 225 mW, 30 mA, SOT-343F
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ManufacturerNXP
Manufacturer Part NoBFU660F,115
Newark Part No.78T5755
Your Part Number
Technical Datasheet
Product Information
ManufacturerNXP
Manufacturer Part NoBFU660F,115
Newark Part No.78T5755
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo5.5V
Collector Emitter Voltage Max5.5V
Transition Frequency21GHz
Power Dissipation225mW
Power Dissipation Pd225mW
DC Collector Current30mA
Continuous Collector Current30mA
Transistor Case StyleSOT-343F
DC Current Gain hFE90hFE
No. of Pins4Pins
RF Transistor CaseSOT-343F
DC Current Gain hFE Min90hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2018)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
5.5V
Power Dissipation
225mW
DC Collector Current
30mA
Transistor Case Style
SOT-343F
No. of Pins
4Pins
DC Current Gain hFE Min
90hFE
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2018)
Collector Emitter Voltage V(br)ceo
5.5V
Transition Frequency
21GHz
Power Dissipation Pd
225mW
Continuous Collector Current
30mA
DC Current Gain hFE
90hFE
RF Transistor Case
SOT-343F
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate