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BFG35,115
Bipolar - RF Transistor, Wideband, NPN, 18 V, 4 GHz, 1 W, 150 mA, SOT-223
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ManufacturerNXP
Manufacturer Part NoBFG35,115
Newark Part No.70R2512
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerNXP
Manufacturer Part NoBFG35,115
Newark Part No.70R2512
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo18V
Collector Emitter Voltage Max18V
Transition Frequency4GHz
Power Dissipation1W
Power Dissipation Pd1W
DC Collector Current150mA
Continuous Collector Current150mA
DC Current Gain hFE70hFE
Transistor Case StyleSOT-223
No. of Pins3Pins
RF Transistor CaseSOT-223
DC Current Gain hFE Min70hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (15-Jan-2019)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
18V
Power Dissipation
1W
DC Collector Current
150mA
DC Current Gain hFE
70hFE
No. of Pins
3Pins
DC Current Gain hFE Min
70hFE
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (15-Jan-2019)
Collector Emitter Voltage V(br)ceo
18V
Transition Frequency
4GHz
Power Dissipation Pd
1W
Continuous Collector Current
150mA
Transistor Case Style
SOT-223
RF Transistor Case
SOT-223
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2019)
Download Product Compliance Certificate
Product Compliance Certificate