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NTE185
Bipolar (BJT) Single Transistor, PNP, 80 V, 4 A, 40 W, TO-126, Through Hole
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Product Information
ManufacturerNTE ELECTRONICS
Manufacturer Part NoNTE185Copy
Newark Part No.42M2405
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo80V
Collector Emitter Voltage Max80V
Continuous Collector Current4A
DC Collector Current4A
Power Dissipation Pd40W
Power Dissipation40W
Transistor MountingThrough Hole
DC Current Gain hFE80hFE
Transistor Case StyleTO-126
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min80hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (16-Jul-2019)
Alternatives for NTE185
2 Products Found
Product Overview
The NTE185 is a -80V Silicon PNP Complementary Transistor designed for use in power amplifier and switching circuits.
- Excellent safe area limits
- Audio power amplifier/switch
Applications
Industrial
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
80V
DC Collector Current
4A
Power Dissipation
40W
DC Current Gain hFE
80hFE
No. of Pins
3Pins
DC Current Gain hFE Min
80hFE
Qualification
-
SVHC
No SVHC (16-Jul-2019)
Collector Emitter Voltage V(br)ceo
80V
Continuous Collector Current
4A
Power Dissipation Pd
40W
Transistor Mounting
Through Hole
Transistor Case Style
TO-126
Transition Frequency
2MHz
Operating Temperature Max
150°C
Product Range
-
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jul-2019)
Download Product Compliance Certificate
Product Compliance Certificate