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PSMN3R0-30YLDX
MOSFET, N-CH, 30V, 100A, POWERSO
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPSMN3R0-30YLDX
Newark Part No.61X9878
Your Part Number
Technical Datasheet
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Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.590 |
| 10+ | $1.720 |
| 25+ | $1.490 |
| 50+ | $1.260 |
| 100+ | $1.120 |
Full Reel
| Quantity | Price |
|---|---|
| 1500+ | $1.030 |
| 3000+ | $0.992 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN3R0-30YLDX
Newark Part No.61X9878
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id100A
Drain Source On State Resistance3100µohm
On Resistance Rds(on)0.0026ohm
Transistor Case StylePowerSO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd91W
Gate Source Threshold Voltage Max1.7V
Power Dissipation91W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
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Product Overview
The PSMN3R0-30YLD is a N-channel enhancement-mode logic level gate drive MOSFET optimised for 4.5V gate drive. NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
- Ultra-low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
- Superfast switching with soft-recovery (s-factor>1)
- Low spiking and ringing for low EMI designs
- Unique SchottkyPlus technology
- Schottky-like performance with <1µA leakage at 25°C
- Low parasitic inductance and resistance
- High reliability clip bonded and solder die attach power SO8 package
- No glue, no wire bonds, qualified to 175°C
- Wave solderable, exposed leads for optimal visual solder inspection
- -55 to 175°C Junction temperature range
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
3100µohm
Transistor Case Style
PowerSO
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
0.0026ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
91W
Power Dissipation
91W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate