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PSMN0R9-25YLC,115
Power MOSFET, N Channel, 25 V, 100 A, 990 µohm, SOT-669, Surface Mount
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ManufacturerNEXPERIA
Manufacturer Part NoPSMN0R9-25YLC,115
Newark Part No.
Full Reel86AK6000
Re-Reel55T6965
Cut Tape55T6965
Your Part Number
Technical Datasheet
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| Quantity | Price |
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|---|---|
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| 3000+ | $1.640 |
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN0R9-25YLC,115
Newark Part No.
Full Reel86AK6000
Re-Reel55T6965
Cut Tape55T6965
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
Drain Source On State Resistance990µohm
On Resistance Rds(on)750µohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd137W
Gate Source Threshold Voltage Max1.41V
Power Dissipation137W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN0R9-25YLC is a 25V logic level N-channel Enhancement Mode MOSFET using NextPower technology. Optimised for 4.5V gate drive utilising NextPower Superjunction technology. This device is designed for power OR-ing, server power supplies and sync rectifier applications.
- Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads
- Ultra low RDS (ON) and low parasitic inductance
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
Drain Source On State Resistance
990µohm
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.41V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
On Resistance Rds(on)
750µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
137W
Power Dissipation
137W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
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US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
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