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PSMN013-100YSEX
Power MOSFET, N Channel, 100 V, 58 A, 11 mohm, PowerSO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPSMN013-100YSEX
Newark Part No.55W5042
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
| Quantity | Price |
|---|---|
| 1+ | $4.960 |
| 10+ | $3.190 |
| 100+ | $2.170 |
Price for:Each
Minimum: 1
Multiple: 1
$4.96
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN013-100YSEX
Newark Part No.55W5042
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id58A
Drain Source On State Resistance11mohm
On Resistance Rds(on)0.011ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd238W
Gate Source Threshold Voltage Max3V
Power Dissipation238W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN013-100YSE is a N-channel standard level MOSFET offers enhanced forward biased safe operating area for superior linear mode operation. The part of NXP's NextPower Live portfolio, PSMN013-100YSE complements the latest hot-swap controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS (ON) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on a 48V backplane/supply rail.
- Very low RDS (ON) for low conduction losses
- -55 to 175°C Junction temperature range
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
11mohm
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
58A
On Resistance Rds(on)
0.011ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
238W
Power Dissipation
238W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability