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PMV45EN2R
Power MOSFET, N Channel, 30 V, 5.1 A, 35 mohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPMV45EN2RCopy
Manufacturer Standard Lead Time54 weeks
Newark Part No.
Full Reel86AK5982
Re-Reel44AC2810RL
Cut Tape44AC2810
Your Part Number
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.689 | $0.69 |
| Total Price | $0.69 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.689 |
| 50+ | $0.429 |
| 100+ | $0.280 |
| 250+ | $0.247 |
| 500+ | $0.213 |
| 1000+ | $0.193 |
| 2500+ | $0.189 |
| 5000+ | $0.185 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.220 |
| 9000+ | $0.198 |
| 15000+ | $0.166 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV45EN2RCopy
Manufacturer Standard Lead Time54 weeks
Newark Part No.
Full Reel86AK5982
Re-Reel44AC2810RL
Cut Tape44AC2810
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.1A
Drain Source On State Resistance0.042ohm
On Resistance Rds(on)0.035ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd510mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation510mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
PMV45EN2R is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, switching circuits.
- Logic level compatible, very fast switching
- Drain-source breakdown voltage is 30V min at ID = 250µA; VGS = 0V; Tj = 25°C
- Gate-source threshold voltage is 1.5V typ at ID = 250µA; VDS=VGS; Tj = 25°C
- Drain leakage current is 1µA max at VDS = 30V; VGS = 0V; Tj = 25°C
- Drain-source on-state resistance is 35mohm typ at VGS = 10V; ID = 4.1A; Tj = 25°C
- Source-drain voltage is 0.8V typ at IS = 1A; VGS = 0V; Tj = 25°C
- Rise time is 12ns typ at VDS = 15 V; ID = 3.2A; VGS = 10V;RG(ext) = 6ohm; Tj = 25°C
- Fall time is 2ns typ at VDS = 15 V; ID = 3.2A; VGS = 10V;RG(ext) = 6ohm; Tj = 25°C
- Ambient temperature range from -55°C to +150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.042ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
510mW
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
5.1A
On Resistance Rds(on)
0.035ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
510mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate