Print Page
BUK9Y14-80E,115
Power MOSFET, N Channel, 80 V, 62 A, 0.0113 ohm, SOT-669, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
3,000 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 8pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $3.130 |
| 10+ | $2.000 |
| 100+ | $1.330 |
| 500+ | $1.050 |
Price for:Each
Minimum: 1
Multiple: 1
$3.13
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBUK9Y14-80E,115Copy
Newark Part No.90W4306
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id62A
On Resistance Rds(on)0.0113ohm
Drain Source On State Resistance0.0113ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Power Dissipation Pd147W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation147W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCLead (25-Jun-2025)
Product Overview
BUK9Y14-80E,115 is a logic level N-channel MOSFET in a LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified for the AEC Q101 standard for use in high-performance automotive applications. Typical applications include 12V, 24V and 48V automotive systems, motors, lamps and solenoid control, transmission control, ultra high performance power switching.
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175°C rating
- True logic level gate with VGS(th) rating of greater than 0.5V at 175°C
- Drain-source breakdown voltage is 80V min at ID = 250µA; VGS = 0V, Tj=25°C
- Drain leakage current is 0.25µA typ at VDS=80V; VGS = 0V; Tj = 25°C
- Drain-source on-state resistance is 12.2mohm typ at VGS = 5V; ID = 15A; Tj = 25°C
- Gate-drain charge is 8.7nC typical at ID = 15A; VDS = 64V; VGS = 5V;Tj = 25°C
- Rise time is 24.6ns typ at VDS = 60V, RL = 4ohm; VGS = 5V;RG(ext) = 5ohm; Tj = 25°C
- Fall time is 24.7ns typ at VDS = 60V, RL = 4ohm; VGS = 5V;RG(ext) = 5ohm; Tj = 25°C
- Source-drain voltage is 0.8V typ at IS = 15A; VGS = 0V; Tj = 25°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0113ohm
Transistor Case Style
SOT-669
Power Dissipation Pd
147W
Gate Source Threshold Voltage Max
1.7V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
62A
Drain Source On State Resistance
0.0113ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
147W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
Alternatives for BUK9Y14-80E,115
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability