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BSS138PW,115
MOSFET, N CHANNEL, 60V, 0.32A, SOT323
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ManufacturerNEXPERIA
Manufacturer Part NoBSS138PW,115
Newark Part No.
Full Reel86AK7299
Re-Reel58T1369
Cut Tape58T1369
Your Part Number
Technical Datasheet
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSS138PW,115
Newark Part No.
Full Reel86AK7299
Re-Reel58T1369
Cut Tape58T1369
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id320mA
Drain Source On State Resistance1.6ohm
On Resistance Rds(on)0.9ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Power Dissipation Pd830mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Logic Level Compatible
- Very Fast Switching
- ESD Protection Upto 1.5kV
- AEC-Q101 Qualified
Applications
Audio, Power Management, Automotive, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
320mA
On Resistance Rds(on)
0.9ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1.6ohm
Transistor Case Style
SOT-323
Power Dissipation Pd
830mW
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability