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CM75DY-34A
IGBT Module, Dual [Half Bridge], 75 A, 2.2 V, 780 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM75DY-34A
Newark Part No.30M3587
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM75DY-34A
Newark Part No.30M3587
Technical Datasheet
Transistor PolarityDual N Channel
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current75A
DC Collector Current75A
Collector Emitter Saturation Voltage Vce(on)2.2V
Collector Emitter Saturation Voltage2.2V
Power Dissipation780W
Power Dissipation Pd780W
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.7kV
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins7Pins
Collector Emitter Voltage Max1.7kV
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
Dual N Channel
Continuous Collector Current
75A
Collector Emitter Saturation Voltage Vce(on)
2.2V
Power Dissipation
780W
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
IGBT Termination
Tab
Collector Emitter Voltage Max
1.7kV
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
75A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
780W
Collector Emitter Voltage V(br)ceo
1.7kV
Transistor Case Style
Module
No. of Pins
7Pins
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate