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CM300DU-24F
IGBT Module, Dual [Half Bridge], 300 A, 1.2 kV, 890 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM300DU-24F
Newark Part No.95B1859
Product RangeF Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 3 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM300DU-24F
Newark Part No.95B1859
Product RangeF Series
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationDual [Half Bridge]
DC Collector Current300A
Continuous Collector Current300A
Collector Emitter Saturation Voltage1.2kV
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd890W
Power Dissipation890W
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product RangeF Series
SVHCTo Be Advised
Product Overview
The CM300DU-24F is a trench gate design Dual IGBTMOD™ Module. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
- Low drive power
- Low VCEsat
- Discrete super fast recovery free wheel diode
- Isolated baseplate for easy heatsink
Applications
Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
300A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation Pd
890W
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
300A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
890W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Tab
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
F Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate