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CM200DY-24NF
IGBT Module, Dual [Half Bridge], 200 A, 2.5 V, 1.13 kW, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DY-24NF
Newark Part No.73K1936
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 2 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM200DY-24NF
Newark Part No.73K1936
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current200A
DC Collector Current200A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage2.5V
Power Dissipation Pd1.13kW
Power Dissipation1.13kW
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins4Pins
IGBT TerminationStud
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Continuous Collector Current
200A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation Pd
1.13kW
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
No. of Pins
4Pins
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
200A
Collector Emitter Saturation Voltage
2.5V
Power Dissipation
1.13kW
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate